1 CMPA0060002F 2 w, 20 mhz - 6000 mhz, gan mmic power amplifer crees CMPA0060002F is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic employs a distributed (traveling-wave) amplifer design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. features ? 17 db small signal gain ? 3 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? 0.5 x 0.5 total product size applications ? ultra broadband amplifers ? fiber drivers ? test instrumentation ? emc amplifer drivers re v 3.0 C ma y 2015 pn: CMPA0060002F package type: 780019 typical performance over 20 mhz - 6.0 ghz (t c = 25?c) parameter 20 mhz 0.5 ghz 1.0 ghz 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz units gain 19.9 18.8 17.8 16.8 16.8 17.5 18.5 16.5 db saturated output power, p sat 1 4.3 4.1 4.5 4.2 3.7 3.9 4.8 3.7 w power gain @ p sat 1 14.7 13.1 12.6 12.2 12.6 10.9 12.2 9.5 db pae @ p sat 1 34 28 29 28 24 26 33 20 % note 1 : p sat is defned as the rf output power where the device starts to draw positive gate current in the range of 2-4 ma. note 2 : v dd = 28 v, i dq = 100 ma figure 1. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units drain-source voltage v dss 84 vdc gate-source voltage v gs -10, +2 vdc storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 4 ma soldering temperature 1 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case r jc 4.3 ?c/w case operating temperature 2,3 t c -40, +150 ?c note: 1 refer to the application note on soldering at www.cree.com/rf/document-library 2 measured for the CMPA0060002F at p diss = 2 w. electrical characteristics (frequency = 20 mhz to 6.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage 1 v (gs)th -3.8 -3.0 -2.7 v v ds = 20 v, ?i d = 2 ma gate quiescent voltage v (gs)q C -2.7 C vdc v dd = 28 v, i dq = 100 ma saturated drain current i dc C 1.4 C a v ds = 6.0 v, v gs = 2.0 v rf characteristics small signal gain s21 13.5 17 21.5 db v dd = 28 v, i dq = 100 ma input return loss s11 C -9 -5 db v dd = 28 v, i dq = 100 ma output return loss s22 C -9 -5 db v dd = 28 v, i dq = 100 ma power output p out 2 3 C w v dd = 28 v, i dq = 100 ma, frequency = 4.0 ghz, p in = 23 dbm power added effciency pae C 23 C % v dd = 28 v, i dq = 100 ma, frequency = 4.0 ghz, p in = 23 dbm power gain g p 10 C C db v dd = 28 v, i dq = 100 ma, frequency = 4.0 ghz, p in = 23 dbm output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 100 ma, p in = 23 dbm notes: 1 the device will draw approximately 20-25 ma at pinch off due to the internal circuit structure. CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 typical performance small signal gain and return losses vs frequency at 28 v power gain vs frequency at 28v s21_28v 0 2 4 6 8 10 12 14 16 18 20 22 24 0123456 frequency (ghz) gai n ( d b ) -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 i n p u t / ou p u t r et u r n l o ss ( d b ) s21_28v s11_28v s22_28v 0 2 4 6 8 10 12 14 16 18 20 0.0 1.0 2.0 3.0 4.0 5.0 6.0 frequency (ghz) gai n ( d b ) gain (output power = 34dbm, 28v) gain (output power = 33dbm, 28v) CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical performance saturated output power performance (p sat ) vs frequency frequency (ghz) p sat at 28v (dbm) p sat at 28v (w) 0.02 36.6 4.3 0.5 36.2 4.1 1.0 36.5 4.5 1.5 36.8 4.7 2.0 36.3 4.2 2.5 35.1 3.3 3.0 35.7 3.7 3.5 34.6 2.9 4.0 35.9 3.9 4.5 35.7 3.8 5.0 36.8 4.8 5.5 34.8 3.0 6.0 34.3 2.7 note: p sat is defned as the rf output power where the device starts to draw positive gate current in the range of 2-4 ma. pae at 33 & 34 dbm output power vs frequency at 28 v 36.0 37.0 38.0 39.0 40.0 s a t u ra t e d ou t p u t p o w e r ( d b m psat_28v 00 0 20 0 0 0 00 0 20 0 0 0 60 a t a t t t p f pa s f 28 v 0 0 20 2 0 00 0 20 0 0 0 60 f p a pa at 28v pa at 28v CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 general device information the CMPA0060002F is a gan hemt mmic distributed driver amplifer, which operates between 20 mhz - 6.0 ghz. the ampli - fer typically provides 17 db of small signal gain and 2 w saturated output power with an associated power added effciency of better than 20 %. the wideband amplifers input and output are internally matched to 50 ohm. the amplifer requires bias from appropriate bias-ts, through the rf input and output ports. the CMPA0060002F is provided in a fange package format. the input and output connections are gold plated to enable gold bond wire attach at the next level assembly. the measurements in this data sheet were taken on devices wire-bonded to the test fxture with 2 mil gold bond wires. the CMPA0060002F-amp and the device were then measured using external bias-ts, (aerofex: 8800, smf3-12; tecdia: ampt-06m20 or similar), as shown in figure 2. the bias-ts were included in the calibration of the test system. all other losses associated with the test fxture are included in the measurements. figure 2. typical test system setup required for measuring CMPA0060002F-amp electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c cmpa2560002f mounted in the test fixture input bias t output bias t v g g rf in rf out v dd CMPA0060002F CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 CMPA0060002F-tb demonstration amplifer circuit CMPA0060002F -tb demonstration amplifer circuit outline CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 CMPA0060002F -amp demonstration amplifer circuit bill of materials designator description qty j1,j2 connector, sma, amp1052901-1 2 - pcb, taconic, rf-35-0100-ch/ch 1 q1 CMPA0060002F 1 notes 1 the CMPA0060002F is connected to the pcb with 2.0 mil au bond wires. 2 an external bias t is required. product dimensions CMPA0060002F (package type 780019) CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 product ordering information order number description unit of measure image CMPA0060002F gan mmic each CMPA0060002F-tb test board without gan mmic each CMPA0060002F-amp test board with gan mmic installed each CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA0060002F rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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